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TDA2005

TDA2005

20W BRIDGE AMPLIFIER FOR CAR RADIO

High output power : PO = 10 + 10 W@RL = 2W,

d = 10% ; PO = 20W@RL = 4W , d = 1%.

High reliability of the chip and package with additional complete safety during operation thanks to protection against :

OUTPUT DC AND AC SHORT CIRCUIT TO GROUND
OVERRATING CHIP TEMPERATURE
LOAD DUMP VOLTAGE SURGE .FORTUITOUS OPEN GROUND
VERY INDUCTIVE LOADS

Flexibility in use : bridge or stereo booster amplifiers with or without boostrap and with programmable gain and bandwidth.

Space and cost saving : very low number of external components, very simple mounting system with no electrical isolation between the package and the heatsink (one screw only). In addition, the circuit offers loudspeaker protection during short circuit for one wire to ground.

DESCRIPTION

The TDA2005 is class B dual audio poweramplifier in MULTIWATT) packagespecifically designed for car radio application : power booster amplifiers are easily designed using this device that provides a high current capability (up to 3.5 A) and that can drive very low impedance loads (down to 1.6W in stereo applications) obtaining an output power of more than 20 W(bridge configuration).

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

^Vs Operating Supply Voltage 18 V

^Vs DC Supply Voltage 28 V

Vs Peak Supply Voltage (for 50 ms) 40 V

Io (*) Output Peak Current (non repetitive t = 0.1 ms) 4.5 A

^Io ^(*) Output Peak Current (repetitive f і 10 Hz) 3.5 A

^Ptot ^{Power Dissipation at T}case ^{= 60}°C 30 W

Tstg, Tj Storage and Junction Temperature – 40 to 150 °C

PIN CONNECTION

THERMALDATA

Symbol Parameter Value Unit

^Rth j-case Thermal Resistance Junction-case Max. 3 °C/W

BRIDGE AMPLIFIER APPLICATION (TDA2005M)

Figure 1 : Test and Application Circuit (Bridge amplifier)

Figure 2 : P.C. Board and Components Layout of Figure 1 (1:1 scale)

ELECTRICAL CHARACTERISTICS (refer to the Bridge application circuit, Tamb = 25oC, GV = 50dB, Rth (heatsink) =4oC/W, unless otherwise specified)

Symbol	Parameter		Test Conditions	Min.	Typ.	Max.	Unit
Vs	Supply Voltage			8		18	V
^Vos	Output Offset Voltage (1)	^Vs ^{= 14.4V}				150	mV
	(between pin 8 and pin 10)	^Vs ^{= 13.2V}				150	mV
^Id	Total Quiescent Drain Current	^Vs ^{= 14.4V}	^RL ^{= 4}W		75	150	mA
		^Vs ^{= 13.2V}	^RL ^{= 3.2}W		70	160	mA
^Po	Output Power	d = 10%	f = 1 Hz				W
		^Vs ^{= 14.4V}	^RL ^{= 4}W	18	20
			^RL ^{= 3.2}W	20	22
		^Vs ^{= 13.2V}	^RL ^{= 3.2}W	17	19
d	Distortion	f = 1kHz
		^Vs ^{= 14.4V}	^RL ^{= 4}W
		^Po ^{= 50mW to 15W}				1	%
		Vs = 13.2V	RL = 3.2W
		^Po ^{= 50mW to 13W}				1	%
^Vi	Input Sensitivity	f = 1kHz
		^Po ^{= 2W}	^RL ^{= 4}W		9		mV
		Po = 2W	RL = 3.2W		8		mV
Ri	Input Resistance	f = 1kHz		70			kW
fL	Low Frequency Roll Off (– 3dB)	RL = 3.2W				40	Hz
fH	High Frequency Roll Off (– 3dB)	RL = 3.2W		20			kHz
Gv	Closed Loop Voltage Gain	f = 1kHz			50		dB
^eN	Total Input Noise Voltage	^Rg ^{= 10k}W	(2)		3	10	mV
SVR	Supply Voltage Rejection	^Rg ^{= 10k}W^{, C}4 ^{= 10}mF		45	55		dB
		^fripple ^{= 100Hz, V}ripple ^{= 0.5V}
h	Efficiency	^Vs ^{= 14.4V, f = 1 kHz}
		^Po ^{= 20W}	^RL ^{= 4}W		60		%
		^Po ^{= 22W}	^RL ^{= 3.2}W		60		%
		^Vs ^{= 13.2V, f = 1 kHz}
		^Po ^{= 19W}	^RL ^{= 3.2}W		58		%
^Tj	Thermal Shut-down Junction	^Vs ^{= 14.4V, R}L ^{= 4}W			145		°C
	Temperature	^{f = 1kHz, P}	tot ^{= 13W}
VOSH	Output Voltage with one Side of	Vs = 14.4V	RL = 4W
	the Speaker shorted to ground	Vs = 13.2V	RL = 3.2W			2	V

Figure 3 : Output Offset Voltage versus Supply Voltage	Figure 4 : Distortion versus Output Power (bridge amplifier)
Figure 5 : Distortion versus Output Power (bridge amplifier)

BRIDGEAMPLIFIER DESIGN

The following consideraions can be useful when designing a bridge amplifier.

	Parameter	Single Ended		Bridge
		1
Vo max	Peak Output Voltage (before clipping)			Vs – 2 VCE sat
		2 ^(Vs	^{– 2 VCE sat)}
		1 ^VS	- ^{2 V}CE sat	^VS - ^{2 V}CE sat
^Io max	Peak Output Current (before clippling)
		2	^RL	^RL
			2	2
		1 (^VS	- ^{2 V}CE sat)	(^VS - ^{2 V}CE sat)
^Po max	RMS Output Power (before clipping)
		4	^{2 R}L	^{2 R}L

Where : VCE sat = output transistors saturation voltage
VS = allowable supply voltage
RL = load impedance

Voltage and current swings are twice for a bridge amplifier in comparison with single endedamplifier. In order words, with the same RL the bridge configuration can deliver an output power that is four times the output power of a single ended amplifier, while, with the same max output current the bridge configuration can deliver an output power that is twice the output power of a single ended amplifier. Core must be taken when selecting VS and RL in order to avoid an output peak current above the absolute maximum rating.

From the expression for IO max, assuming VS = 14.4V and VCE sat = 2V, the minimum load that can be driven by TDA2005 in bridge configuration is :

The voltage gain of the bridge configuration is given by (see Figure 34) :

For sufficiently high gains (40 to 50dB) it is possible to put R2 =R4 andR3 =2 R1, simplifing the formula in :

Gv (dB)	R1 (W)	R2 = R4 (W)	R3 (W)
40	1000	39	2000
50	1000	12	2000

Figure 6 : Bridge Configuration

STEREO AMPLIFIER APPLICATION (TDA2005S)

Figure 7 : Typical Application Circuit

ELECTRICAL CHARACTERISTICS (refer to the Stereo application circuit, Tamb = 25oC, GV = 50dB, Rth (heatsink) = 4oC/W, unless otherwwise specified)

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
Vs	Supply Voltage			8		18	V
^Vo	Quiescent Output Voltage	^Vs ^{= 14.4V}		6.6	7.2	7.8	V
		^Vs ^{= 13.2V}		6	6.6	7.2	V
Id	Total Quiescent Drain Current	Vs = 14.4V			65	120	mA
		^Vs ^{= 13.2V}			62	120	mA
^Po	Output Power (each channel)	f = 1kHz, d = 10%					W
		^Vs ^{= 14.4V}	^RL ^{= 4}W	6	6.5
			RL = 3.2W	7	8
			^RL ^{= 2}W	9	10
			^RL ^{= 1.6}W	10	11
		Vs = 13.2V	RL = 3.2W	6	6.5
			RL = 1.6W	9	10
		Vs = 16V	RL = 2W		12
d	Distortion (each channel)	f = 1kHz
		Vs = 14.4V	RL = 4W
		Po = 50mW to 4W			0.2	1	%
		Vs = 14.4V	RL = 2W
		Po = 50mW to 6W			0.3	1	%
		Vs = 13.2V	RL = 3.2W
		^Po ^{= 50mW to 3W}			0.2	1	%
		^Vs ^{= 13.2V}	^RL ^{= 1.6}W
		Po = 40mW to 6W			0.3	1	%
CT	Cross Talk (1)	Vs = 14.4V, Vo = 4VRMS					dB
		RL = 4W, Rg = 5k
			^Wf = 1kHz		60
			f = 10kHz		45
Vi	Input Saturation Voltage			300			mV
^Vi	Input Sensitivity	^{f = 1kHz, P}o ^{= 1W}			Микросхемы Copyright © _BY Radioland - (4900 Прочтено)

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